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| SE3455/5455 GaAs Infrared Emitting Diode FEATURES * TO-46 metal can package * Choice of flat window or lensed package * 90 or 20 (nominal) beam angle option * 935 nm wavelength * Wide operating temperature range (-55C to +125C) * Ideal for high pulsed current applications * Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491 phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals 0.005(0.12) 2 plc decimals 0.020(0.51) SE3455 .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. 45 .046(1.17) .036(.91) .100(2.54)DIA NOM 1 2 .048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) .153 (3.89) .140 (3.56) .028(.71) .018 DIA. (.460) INFRA--5.DIM LEADS: 1. CATHODE (TAB) 2. ANODE (CASE) SE5455 .188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. 45 .046(1.17) .036(.91) .100(2.54)DIA NOM 1 2 .160 (4.06) DIA. .137 (3.48) .247 (6.27) .224 (5.89) .015 (0.36) .200 5.08 .048(1.22) .028(.71) .018 DIA. (.460) LEADS: 1. CATHODE (TAB) 2. ANODE (CASE) 26 (c) Honeywell Europe S.A. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE3455/5455 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) PARAMETER Total Power Output SE3455-001, SE5455-001 SE3455-002, SE5455-002 SE3455-003, SE5455-003 SE3455-004, SE5455-004 Forward Voltage Reverse Breakdown Voltage Peak Output Wavelength Spectral Bandwidth Spectral Shift With Temperature Beam Angle(1) SE3455 SE5455 Radiation Rise And Fall Time SYMBOL PO MIN 2.0 3.5 4.8 5.4 VF VBR p p/T O 1.7 3.0 935 50 0.3 90 20 0.7 V V nm nm nm/C degr. IF=100 mA IR=10 A TYP MAX UNITS mW TEST CONDITIONS IF=100 mA IF=Constant tr, tf s Notes 1. Beam angle is defined as the total included angle between the half intensity points. ABSOLUTE MAXIMUM RATINGS (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current Peak Forward Current (1s pulse width, 300 pps) Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) 100 mA 3A 150 mW(1) -55C to 125C -65C to 150C 260C SCHEMATIC Anode Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.43 mW/C. INFRA--1.SCH Cathode Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 27 SE3455/5455 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement (SE3455) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 Fig. 2 Radiant Intensity vs Angular Displacement (SE5455) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Relative intensity INFRA-17.GRA INFRA-23.GRA Relative intensity Angular displacement - degrees Angular displacement - degrees Fig. 3 Radiant Intensity vs Forward Current 250 Fig. 4 Forward Voltage vs Forward Current Normalized radiant intensity - % 200 150 100 50 0.0 INFRA-18.GRA INFRA-19.GRA Forward voltage - V Pulsed 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 20 40 60 80 100 0 100 200 300 400 500 Forward current - mA Forward current - mA Fig. 5 Forward Voltage vs Temperature 1.35 Fig. 6 Spectral Bandwidth Forward voltage - V 1.33 1.31 1.29 1.27 1.25 1.23 INFRA-20.GRA IF = 100 mA -30 -10 10 30 50 70 90 INFRA--5.GRA 1.21 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 870 890 910 930 950 970 990 1010 Relative intensity Temperature - C All Performance Curves Show Typical Values 28 Wavelength - nm Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SE3455/5455 GaAs Infrared Emitting Diode Fig. 7 Coupling Characteristics SE3455 with SD3443 1.0 Fig. 8 Coupling Characteristics SE5455 with SD5443 1.0 Normalized light current INFRA-21.GRA Normalized light current 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 89 Window-to-window distance - inches INFRA-24.GRA Lens-to-lens distance - inches Fig. 9 Radiant Intensity vs Case Temperature Normalized radiant intensity 5.0 4.0 3.0 2.0 1.0 0.5 0.4 0.3 0.2 -75 -50 -25 0 Normalized to IF = 100 mA TA = 25 C 25 50 75 100 125 Case temperature - C Honeywell reserves the right to make changes in order to improve design and supply the best products possible. INFRA-22.GRA 0.1 29 |
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